Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

TL;DR

This paper presents a low-temperature synthesis method for BaZrS3 thin films, enabling their use in optoelectronic devices by overcoming high-temperature processing limitations.

Contribution

The authors developed a chemical pathway to synthesize high-quality BaZrS3 thin films at 500°C, significantly lower than traditional methods, facilitating device fabrication.

Findings

Successful synthesis of phase-pure BaZrS3 at 500°C

Enhanced film quality with reduced surface roughness

Demonstrated functional photodetectors and transistors

Abstract

Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Raman spectroscopies. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. The fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm2/Vs and 2.6 cm2/Vs, respectively.