Valley two-qubit system in a MoS$_2$-monolayer gated double quantum dot

TL;DR

This paper demonstrates how valley isospins in a MoS2 monolayer double quantum dot can be used as qubits, controllable and readable via electrical voltages, with potential for scalable quantum computing.

Contribution

It introduces a method to initialize, control, and read out valley qubits in MoS2 monolayers using purely electrical means, and proves their universality for quantum computing.

Findings

Valley qubits can be controlled electrically in MoS2 quantum dots.

Two-qubit exchange and readout via Pauli blockade demonstrated.

Numerical simulations confirm the feasibility of valley-based quantum operations.

Abstract

We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits only by electrical means using voltages applied to the local planar gates, which are layered on the top of the flake. By demonstrating the two-qubit exchange or readout via the Pauli blockade, we prove that valley qubits in transition-metal-dichalcogenide semiconductors family fulfill the universality criteria and represent a scalable quantum computing platform. Our numerical experiments are based on the tight-binding model for a MoS$_2$ monolayer, which gives single-electron eigenstates that are then used to construct a basis of Slater-determinants for the two-electron configuration space. We express screened electron-electron interactions in this basis by calculating the Coulomb matrix elements using localized Slater-type orbitals. Then we solve the time-dependent Schr\"odinger equation and obtain an exact time-evolution of the two-electron system. During the evolution we simultaneously solve the Poison equation, finding the confinement potential controlled via voltages applied to the gates.