Synthesis, electric-field induced phase transitions and memristive properties of spontaneously ion intercalated two-dimensional MnO$_2$

TL;DR

This paper reports on the synthesis of ultra-thin layered MnO₂ with spontaneous potassium intercalation, revealing phase transitions and memristive behavior driven by electric-field induced ionic motion, with potential applications in neuromorphic electronics.

Contribution

It introduces a new synthesis method for ultra-thin MnO₂ with spontaneous ion intercalation and demonstrates its phase transition and memristive properties under electric fields.

Findings

Spontaneous potassium intercalation during synthesis of ultra-thin MnO₂.

Reversible phase transition between layered and spinel structures.

Memristive behavior with synapse-like plasticity in K-MnO₂ devices.

Abstract

Two-dimensional (2D) materials are suitable hosts for the intercalation of extrinsic guest ions such as Li+, Na+ and K+ as the interlayer coupling is weak. This allows ion intercalation engineering of 2D materials, which may be a key to advancing technological applications in energy storage, neuromorphic electronics, and bioelectronics. However, ions that are extrinsic to the host materials possess challenges in fabrication of devices as there are extra steps of ion intercalation. This results in degradation of the long-term stability of the intercalated atomically thin structures. Here, we introduce large-area single-crystal ultra-thin layered MnO$_2$ via chemical vapor deposition, spontaneously intercalated by potassium ions during the synthesis. We studied the ultra-thin 2D K-MnO$_2$ in detail and showed that charge transport in these crystals is dominated by motion of hydrated potassium ions in the interlayer space. Moreover, K-MnO$_2$ crystals exhibit reversible layered-to-spinel phase transition accompanied by an optical contrast change based on the electrical and optical modulation of the potassium and the interlayer water concentration. We used the electric field driven ionic motion in K-MnO$_2$ based devices to demonstrate the memristive properties of two terminal devices. As a possible application we showed that K-MnO$_2$ memristors display synapse-like behavior such as short and long-term potentiation and depression as well as ionic coupling effects.