Controlling Domain-Wall Nucleation in Ta/CoFeB/MgO Nanomagnets via Local Ga+ Ion Irradiation
Simon Mendisch (1), Fabrizio Riente (2), Valentin Ahrens (1), Luca, Gnoli (2), Michael Haider (1), Matthias Opel (2), Martina Kiechle (1),, Massimo Ruo Roch (2), Markus Becherer (1) ((1) Technical University of, Munich, (2) Politecnico di Torino, (3) Bavarian Academy of Sciences)

TL;DR
This study demonstrates how focused Ga+ ion irradiation can precisely control domain-wall nucleation in Ta/CoFeB/MgO nanomagnets by modulating magnetic anisotropy, enabling bidirectional manipulation and defect engineering.
Contribution
It introduces a novel method using Ga+ ion irradiation to control magnetic anisotropy and nucleation sites in nanomagnets, expanding the toolkit for spintronic device engineering.
Findings
Irradiation modulates magnetic anisotropy in a dose-dependent manner.
Focused irradiation creates localized defects controlling nucleation points.
Nucleation mechanisms shift from coherent rotation to depinning from anisotropy gradients.
Abstract
Comprehensive control of the domain wall nucleation process is crucial for spin-based emerging technologies ranging from random-access and storage-class memories over domain-wall logic concepts to nanomagnetic logic. In this work, focused Ga+ ion-irradiation is investigated as an effective means to control domain-wall nucleation in Ta/CoFeB/MgO nanostructures. We show that analogously to He+ irradiation, it is not only possible to reduce the perpendicular magnetic anisotropy but also to increase it significantly, enabling new, bidirectional manipulation schemes. First, the irradiation effects are assessed on film level, sketching an overview of the dose-dependent changes in the magnetic energy landscape. Subsequent time-domain nucleation characteristics of irradiated nanostructures reveal substantial increases in the anisotropy fields but surprisingly small effects on the measured…
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