Im$\{\chi^{(3)}\}$ spectra of 110-cut GaAs, GaP, and Si near the two-photon absorption band edge
Brandon J Furey (1), Rodrigo M. Barba-Barba (2), Ramon Carriles (2),, Alan Bernal (2), Bernardo S. Mendoza (2), Michael C. Downer (1) ((1), University of Texas at Austin, Austin, Texas, United States of America, (2), Centro de Investigaciones en \'Optica A.C., L\'eon, M\'exico)

TL;DR
This study measures the third-order nonlinear optical spectra of GaAs, GaP, and Si near their two-photon absorption edges using femtosecond spectroscopy, revealing detailed spectral features and symmetry breaking effects.
Contribution
It provides the first comprehensive characterization of the imaginary part of the third-order nonlinear susceptibility tensor for these materials near the two-photon absorption edge.
Findings
Peak of $eta()$ in GaAs near 0.78 $E_g$
Dispersion in GaP and Si increases with photon energy
Kleinman symmetry is broken in all three materials
Abstract
Spectra of the degenerate two-photon absorption coefficient , anisotropy parameter , and dichroism parameter of crystalline 110-cut GaAs, GaP, and Si at 300 K were measured using femtosecond pump-probe modulation spectroscopy over an excitation range in the vicinity of each material's half-band gap (overall eV, or nm). Together these three parameters completely characterize the three independent components of the imaginary part of the degenerate third-order nonlinear optical susceptibility tensor . In direct-gap GaAs, these components peak at which is close to the peak at predicted by the Jones-Reiss phenomenological model. The dispersion…
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