Cross-plane thermal conductivity of GaN/AlN superlattices

TL;DR

This study measures the cross-plane thermal conductivity of GaN/AlN superlattices, revealing how layer thickness and interdiffusion affect heat conduction, with implications for improved heat management in electronic devices.

Contribution

It provides the first detailed measurement of cross-plane thermal conductivity in GaN/AlN superlattices considering interdiffusion effects, advancing understanding of heat conduction in these heterostructures.

Findings

Thermal conductivity can be as low as 5.9 W/(m·K).

Interdiffusion at interfaces influences phonon scattering.

Results enable better heat management in III-nitride devices.

Abstract

Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building-blocks of state-of-the-art devices employed for active cooling and energy-saving lightning. Insights into the heat conduction of these structures are essential in the perspective of improving the heat management for prospective applications. Here, the cross-plane (perpendicular to the sample's surface) thermal conductivity of GaN/AlN superlattices as a function of the layers' thickness is established by employing the $3\omega$-method. Moreover, the role of interdiffusion at the interfaces on the phonon scattering is taken into account in the modelling and data treatment. It is found, that the cross-plane thermal conductivity of the epitaxial heterostructures can be driven to values as low as 5.9 W/(m$\cdot$K) comparable with those reported for amorphous films, thus opening wide perspectives for optimized heat management in III-nitride-based epitaxial multilayers.