Combinatorial tuning of electronic structure and thermoelectric properties in Co$_2$MnAl$_{1-x}$Si$_x$ Weyl semimetals
Rajkumar Modak, Kazuki Goto, Shigenori Ueda, Yoshio Miura, Ken-ichi, Uchida, and Yuya Sakuraba

TL;DR
This study introduces a layer-by-layer combinatorial deposition method to tune the Fermi level in Co$_2$MnAl$_{1-x}$Si$_x$ Weyl semimetals, enabling efficient exploration of their thermoelectric properties and anomalous Nernst effect.
Contribution
The paper presents a novel fabrication technique for composition-spread Weyl semimetal films, allowing systematic tuning of electronic structure and thermoelectric properties in a single sample.
Findings
Fermi level shifts approximately 0.40 eV across composition range
AEE and ANE signals show similar composition dependence
Effective method for studying thermoelectric effects in Weyl semimetals
Abstract
A tuning of Fermi level (E) near Weyl points is one of the promising approaches to realize large anomalous Nernst effect (ANE). In this work, we introduce an efficient approach to tune E for the CoMnAl Weyl semimetal through a layer-by-layer combinatorial deposition of CoMnAlSi (CMAS) thin film. A single-crystalline composition-spread film with x varied from 0 to 1 was fabricated. The structural characterization reveals the formation of single-phase CMAS alloy throughout the composition range with a gradual improvement of L2 order with x similar to the co-sputtered single layered film, which validates the present fabrication technique. Hard X-ray photoemission spectroscopy for the CMAS composition-spread film directly confirmed the rigid band-like E shift of approximately 0.40 eV towards the composition gradient direction from x = 0 to 1. The…
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