Temporal characterisation of silicon sensors on Timepix3 ASICs

TL;DR

This study evaluates the timing performance of silicon sensors on Timepix3 ASICs under various irradiation conditions, using beam tests and grazing angles method to analyze charge collection and timing properties at different depths.

Contribution

It introduces the use of the grazing angles method to analyze timing and charge collection in irradiated silicon sensors on Timepix3 ASICs.

Findings

Grazing angles method effectively characterizes depth-dependent charge collection.

Timing performance degrades with increased irradiation levels.

The study provides insights into sensor behavior under radiation damage.

Abstract

The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 \times 10^{15} 1 \mathrm{\,Me\kern -0.1em V} \mathrm{ \,n_{eq}} {\mathrm{ \,cm}}^{-2}$. The sensors have been tested with a beam of charged particles in two different configurations, perpendicular to and almost parallel to the incident beam. The second approach, known as the grazing angles method, is shown to be a powerful method to investigate not only the charge collection, but also the time-to-threshold properties as a function of the depth at which the charges are liberated.