Racetrack microresonator based electro-optic phase shifters on a 3C-silicon-carbide-on-insulator platform

TL;DR

This paper demonstrates integrated electro-optic phase shifters using racetrack microresonators on a 3C-silicon-carbide-on-insulator platform, achieving significant phase shifts at near-infrared wavelengths for photonic applications.

Contribution

First demonstration of integrated EO phase shifters on a 3C-SiC-on-insulator platform with measurable phase shifts and high Q-factors.

Findings

Achieved optical phase shifts with Q factors ~30,000

Voltage length-product of 118 V·cm indicating EO efficiency

Platform suitable for broadband nonlinear and quantum photonics

Abstract

We report the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C-silicon-carbide-on-insulator (SiCOI) platform working at near-infrared (NIR) wavelengths. By applying DC voltage in the crystalline axis perpendicular to the waveguide plane, we have observed optical phase shifts from the racetrack microresonators whose loaded quality (Q) factors are ~ 30,000. We show voltage length-product (V${\pi}$${\cdot}$L${\pi}$) of 118 V${\cdot}$cm, which corresponds to an EO coefficient r$_{41}$ of 2.6 pm/V. The SiCOI platform can be used to realize tunable SiC integrated photonic devices that are desirable for applications in nonlinear and quantum photonics over a wide bandwidth that covers visible and infrared wavelengths.