Control of the metal-insulator transition in NdNiO$_3$ thin films through the interplay between structural and electronic properties
Y. E. Suyolcu, K. F\"ursich, M. Hepting, Z. Zhong, Y. Lu, Y. Wang, G., Christiani, G. Logvenov, P. Hansmann, M. Minola, B. Keimer, P. A. van Aken,, and E. Benckiser

TL;DR
This study investigates how substrate orientation and film thickness influence the metal-insulator transition in NdNiO$_3$ thin films, revealing that structural modifications at the atomic level can tune electronic properties.
Contribution
It demonstrates the role of substrate crystallographic orientation in controlling the MIT in NdNiO$_3$ films through structural and electronic interplay, combining experimental and theoretical methods.
Findings
Substrate orientation affects the transition temperature $T_{MIT}$.
Growth on [101]-oriented substrates increases $T_{MIT}$ due to bond-disproportionation.
[011]-oriented films tend to form structural defects and non-equilibrium phases.
Abstract
Heteroepitaxy offers a new type of control mechanism for the crystal structure, the electronic correlations, and thus the functional properties of transition-metal oxides. Here, we combine electrical transport measurements, high-resolution scanning transmission electron microscopy (STEM), and density functional theory (DFT) to investigate the evolution of the metal-to-insulator transition (MIT) in NdNiO films as a function of film thickness and NdGaO substrate crystallographic orientation. We find that for two different substrate facets, orthorhombic (101) and (011), modifications of the NiO octahedral network are key for tuning the transition temperature over a wide temperature range. A comparison of films of identical thickness reveals that growth on [101]-oriented substrates generally results in a higher , which can be attributed to an…
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