Electronic localization in small-angle twisted bilayer graphene
V. Hung Nguyen, D. Paszko, M. Lamparski, B. Van Troeye, V. Meunier,, and J.-C. Charlier

TL;DR
This study uses a tight-binding model to analyze how lattice reconstruction influences electronic localization in small-angle twisted bilayer graphene, identifying a critical angle at approximately 1.1° where electron localization is maximized.
Contribution
It reveals the impact of superlattice reconstruction on electronic structure and clarifies the significance of the 1.1° magic angle in electron localization in TBLG.
Findings
Maximized electron localization at the 1.1° magic angle.
Reconstruction causes a transition between two classes of TBLG.
Small angles below 1.1° show reduced AA region contribution.
Abstract
Close to a magical angle, twisted bilayer graphene (TBLG) systems exhibit isolated flat electronic bands and, accordingly, strong electron localization. TBLGs have hence been ideal platforms to explore superconductivity, correlated insulating states, magnetism, and quantized anomalous Hall states in reduced dimension. Below a threshold twist angle ( ), the TBLG superlattice undergoes lattice reconstruction, leading to a periodic moir\'e structure which presents a marked atomic corrugation. Using a tight-binding framework, this research demonstrates that superlattice reconstruction affects significantly the electronic structure of small-angle TBLGs. The first magic angle at is found to be a critical case presenting globally maximized electron localization, thus separating reconstructed TBLGs into two classes with clearly distinct electronic properties.…
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