g-SiC6 Monolayer: A New Graphene-like Dirac Cone Material with a High Fermi Velocity
Tao Yang, Xingang Jiang, Wencai Yi, Xiaomin Cheng, Xiaobing Liu

TL;DR
This paper predicts a new 2D silicon carbide monolayer, g-SiC6, with a high Fermi velocity and controllable Dirac cone properties, showing promise for high-performance electronic applications.
Contribution
First-principles calculations reveal a novel g-SiC6 monolayer with exceptional stability, high Fermi velocity, and tunable Dirac cones, expanding the family of 2D Dirac materials.
Findings
g-SiC6 has the highest Fermi velocity among silicon carbide Dirac materials.
The Dirac cone in g-SiC6 can be tuned by uniaxial and shear strain.
New AB6 compounds with similar structure also exhibit Dirac cones and stability.
Abstract
Two-dimensional (2D) materials with Dirac cones have been intrigued by many unique properties, i.e., the effective masses of carriers close to zero and Fermi velocity of ultrahigh, which yields a great possibility in high-performance electronic devices. In this work, using first-principles calculations, we have predicted a new Dirac cone material of silicon carbide with the new stoichiometries, named g-SiC6 monolayer, which is composed of sp2 hybridized with a graphene-like structure. The detailed calculations have revealed that g-SiC6 has outstanding dynamical, thermal, and mechanical stabilities, and the mechanical and electronic properties are still isotropic. Of great interest is that the Fermi velocity of g-SiC6 monolayer is the highest in silicon carbide Dirac materials until now. The Dirac cone of the g-SiC6 is controllable by an in-plane uniaxial strain and shear strain, which…
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Taxonomy
TopicsGraphene research and applications · MXene and MAX Phase Materials · Boron and Carbon Nanomaterials Research
