Is more Phase Segregation better for mixed halide perovskite devices: Spatial randomness, Ion migration, and Non-radiative recombination
Abhimanyu Singareddy, Uday Kiran Reddy Sadula, Pradeep R. Nair

TL;DR
This study investigates how phase segregation, ion migration, and interface effects influence the performance and stability of mixed halide perovskite devices, revealing complex relationships between morphology and efficiency.
Contribution
The paper introduces an analytical model and statistical simulations to understand the impact of phase segregation patterns and interface states on device performance.
Findings
Increased phase segregation can unexpectedly improve efficiency.
Non-radiative recombination at interfaces degrades device performance.
Critical interface parameters determine system-level variability.
Abstract
Phase segregation is a critical phenomenon that influences the stability and performance of mixed halide perovskite based opto-electronic devices. In addition to the underlying physical mechanisms, the spatial pattern and randomness associated with the nanoscale morphology of phase segregation significantly influence performance degradation a topic which, along with the multitude of parameter combinations, has remained too complex to address so far. Given this, with MAPbI1.5Br1.5 as a model system, here we address the influence of critical factors like the spatial randomness of phase segregation, influence of ion migration, and the effect of increased non radiative recombination at material interfaces. Interestingly, our analytical model and detailed statistical simulations indicate a unique trend morphology evolution with increased phase segregation results, surprisingly, in a recovery…
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Taxonomy
TopicsPerovskite Materials and Applications · Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films
