Precise, Sub-Nanosecond, and High-Voltage Switching of Complex Loads Enabled by Gallium Nitride Electronics

TL;DR

This paper demonstrates the use of GaN power electronics to achieve precise, sub-nanosecond high-voltage switching of complex loads, enabling rapid transitions with simple design and broad application potential.

Contribution

It introduces a novel, simple GaN-based pulser capable of fast, high-voltage switching without impedance matching, suitable for complex loads and various scientific fields.

Findings

Achieved 250 ps, 100 V pulser measured with a 2 GHz oscilloscope.

Demonstrated precise 100 V transitions in 1.5 ns after damping.

Simulated even faster switching capabilities for internal load fields.

Abstract

In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field effect transistor (GaNFET) and driver, these GaN pulsers are capable of generating pulses ranging from 100 - 650 V and 5 - 60 A in 0.25 - 8 ns using simple designs with easy control, few-nanosecond propagation delays, and MHz repetition rates. We experimentally demonstrate a simple 250 ps, 100 V pulser measured by a directly coupled 2 GHz oscilloscope. By introducing resistive dampening, we can eliminate ringing to allow for precise 100 V transitions that complete a -10 V to -90 V transition in 1.5 ns, limited primarily by the inductance of the oscilloscope measurement path. The performance of the pulser attached to various load structures is simulated, demonstrating the possibility of even faster switching of internal fields in these loads. These circuits also have 0.25 cm$\mathrm{^2}$ active regions and <1 W power dissipation, enabling their integration into a wide variety of environments and apparatus. The proximity of the GaNFETs to the load due to this integration minimizes parasitic quantities that slow switching as well as remove the need to match from 50 ${\Omega}$ lines by allowing for a lumped element approximation small loads. We expect these GaN pulsers to have broad application in fields such as optics, nuclear sciences, charged particle optics, and atomic physics that require nanosecond, high-voltage transitions.