Synchronized resistance to inhomogeneous magnetic field-induced dephasing of an image stored in a cold atomic ensemble
Ying-Hao Ye, Lei Zeng, Yi-Chen Yu, Ming-Xin Dong, En-Ze Li, Wei-Hang, Zhang, Zong-Kai Liu, Li-Hua Zhang, Guang-Can Guo, Dong-Sheng Ding, Bao-Sen, Shi

TL;DR
This paper demonstrates that applying a uniform magnetic field can synchronize atomic spins in a cold-atom memory, significantly reducing pattern distortion caused by magnetic inhomogeneities and enhancing storage longevity for quantum networks.
Contribution
It introduces a method to suppress magnetic field-induced dephasing in cold-atom memories by using a strong uniform magnetic field to synchronize atomic spins.
Findings
Magnetic inhomogeneity causes pattern distortion in atomic memory.
Applying a uniform magnetic field suppresses dephasing effects.
Enhanced pattern preservation over longer times achieved.
Abstract
Long-lived storage of arbitrary transverse multimodes is important for establishing a high-channel-capacity quantum network. Most of the pioneering works focused on atomic diffusion as the dominant impact on the retrieved pattern in an atom-based memory. In this work, we demonstrate that the unsynchronized Larmor precession of atoms in the inhomogeneous magnetic field dominates the distortion of the pattern stored in a cold-atom-based memory. We find that this distortion effect can be eliminated by applying a strong uniform polarization magnetic field. By preparing atoms in magnetically insensitive states, the destructive interference between different spin-wave components is diminished, and the stored localized patterns are synchronized further in a single spin-wave component; then, an obvious enhancement in preserving patterns for a long time is obtained. The reported results are very…
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