Modulation characteristics of uncooled graphene photodetectors

TL;DR

This paper investigates the modulation properties of uncooled graphene-based photodetectors for THz and IR radiation, comparing different device structures to determine their performance limits and optimization strategies.

Contribution

It provides a detailed analysis of modulation characteristics in uniform and perforated graphene layers, introducing a comparative evaluation of various uncooled graphene photodetectors.

Findings

Determines the ultimate modulation frequencies of graphene photodetectors.

Shows performance differences between GL-photoresistors, PGL-based photodiodes, and reverse-biased photodiodes.

Offers insights for optimizing uncooled graphene photodetector design.

Abstract

We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs) and perforated graphene layers (PGLs) due to the absorption of THz and IR radiation. The performance of the photodetectors (both the GL-photoresistor and the PGL-based barrier photodiodes) are compared. Their characteristics are also compared with the GL reverse-biased photodiodes. The obtained results allow to evaluate the ultimate modulation frequencies of these photodetectors and can be used for their optimization.