Origin of high hardness and optoelectronic and thermo-physical properties of boron-rich compounds B6X (X = S, Se): a comprehensive study via DFT approach
M. M. Hossain, M. A. Ali, M. M. Uddin, A. K. M. A. Islam, S. H., Naqib

TL;DR
This study uses density functional theory to comprehensively analyze the structural, mechanical, electronic, optical, and thermodynamic properties of boron-rich compounds B6X (X = S, Se), revealing their high hardness, semiconducting nature, and potential for thermal and UV applications.
Contribution
It provides the first detailed theoretical investigation of the mechanical, electronic, optical, and thermodynamic properties of B6S and B6Se compounds, highlighting their potential applications.
Findings
High hardness values (~31-35 GPa) suggest they are hard materials.
B6S and B6Se are indirect semiconductors with strong covalent bonds.
Potential use in UV disinfection and thermal management applications.
Abstract
In the present study, the structural and hitherto uninvestigated mechanical (elastic stiffness constants, machinability index, Cauchy pressure, anisotropy indices, brittleness/ductility, Poissons ratio), electronic, optical, and thermodynamic properties of novel boron-rich compounds B6X (X = S, Se) have been explored using density functional theory. The estimated structural lattice parameters were consistent with the prior report. The mechanical and dynamical stability of these compounds have been established theoretically. The materials are brittle in nature and elastically anisotropic. The value of fracture toughness, KIC for the B6S and B6Se are ~ 2.07 MPam0.5, evaluating the resistance to limit the crack propagation inside the materials. Both B6S and B6Se compounds possess high hardness values in the range 31-35 GPa, and have the potential to be prominent members of the class of…
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