Nearly ideal memristive functionality based on viscous magnetization dynamics

TL;DR

This paper presents a novel memristor based on viscous magnetization dynamics in a ferromagnet/antiferromagnet bilayer, demonstrating nearly ideal memristive behavior suitable for neuromorphic applications.

Contribution

It introduces a new memristor implementation utilizing viscous magnetization dynamics, enabling scalable and magnetic field-driven memristive functionality.

Findings

Memristor resistance correlates with the integral of input signals.

Magnetic frustration induces viscous magnetization dynamics.

Device is compatible with electronic driving and downscaling.

Abstract

We experimentally demonstrate a proof-of-principle implementation of an almost ideal memristor - a two-terminal circuit element whose resistance is approximately proportional to the integral of the input signal over time. The demonstrated device is based on a thin-film ferromagnet/antiferromagnet bilayer, where magnetic frustration results in viscous magnetization dynamics enabling memristive functionality, while the external magnetic field plays the role of the driving input. The demonstrated memristor concept is amenable to downscaling and can be adapted for electronic driving, making it attractive for applications in neuromorphic circuits.