Scalable creation of silicon-vacancy color centers in diamond by ion implantation through a 1-$\mu$m pinhole

TL;DR

This paper demonstrates a scalable method for creating silicon-vacancy color centers in diamond with precise spatial control using ion implantation through a micron-scale pinhole, advancing quantum emitter fabrication.

Contribution

It introduces a novel ion implantation technique with nanometer precision for scalable SiV center creation in diamond.

Findings

Achieved spatial control of SiV centers within diffraction-limited areas.

Analyzed the effects of ion scattering on implantation accuracy.

Reported activation yields for single quantum emitter creation.

Abstract

The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, we present the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond by ion implantation. The lateral position of the SiV is spatially controlled by a 1-$\mu$m pinhole placed in front of the sample, which can be moved nanometer precise using a piezo stage. The initial implantation position is controlled by monitoring the ion beam position with a camera. Hereby, silicon ions are implanted at the desired spots in an area comparable to the diffraction limit. We discuss the role of ions scattered by the pinhole and the activation yield of the SiV color centers for the creation of single quantum emitters.