Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
Shisheng Li, Jinhua Hong, Bo Gao, Yung-Chang Lin, Hong En Lim, Xueyi, Lu, Jing Wu, Song Liu, Yoshitaka Tateyama, Yoshiki Sakuma, Kazuhito, Tsukagoshi, Kazu Suenaga, Takaaki Taniguchi

TL;DR
This paper introduces a novel chemical vapor deposition method for doping TMDC monolayers with Re and V, enabling tunable electrical properties and significantly improving contact performance in 2D electronic devices.
Contribution
It presents a new controllable growth technique for Re and V-doped TMDCs, demonstrating tunable conductivity and enhanced transistor performance for 2D electronics.
Findings
Electrical conductivity increases up to 10^8 times in V-doped TMDCs.
Tunable semiconductor to metal transition observed in doped TMDCs.
Improved transistor on/off ratios and on-state currents using doped TMDC contacts.
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V)-doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re and V-doped…
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