Theory of heterogeneous circuits with stochastic memristive devices
V. A. Slipko, Y. V. Pershin

TL;DR
This paper presents a novel analytical and numerical framework for modeling heterogeneous stochastic circuits that combine memristive devices with reactive components, enabling better understanding of complex stochastic networks.
Contribution
It introduces a Chapman-Kolmogorov equation-based approach to model circuits with stochastic memristive devices and reactive components, providing analytical solutions and a new modeling tool.
Findings
Analytical solutions for a binary memristor-capacitor circuit are derived.
The approach offers a versatile tool for modeling complex stochastic networks.
Potential applications span various fields involving stochastic circuit analysis.
Abstract
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or inductors). Such circuits are described in terms of occupation probabilities of memristive states that are functions of reactive variables. As an illustrative example, the series circuit of a binary memristor and capacitor is considered in detail. Some analytical solutions are found. Our work offers a novel analytical/numerical tool for modeling complex stochastic networks, which may find a broad range of applications.
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Taxonomy
TopicsAdvanced Memory and Neural Computing · stochastic dynamics and bifurcation · Neural dynamics and brain function
