Schottky-diode design for the world's leading telecommunication

TL;DR

This paper explores the design of Schottky diodes using BN/GaN layered composites and nanostructuring, aiming to enhance wireless energy harvesting and high-frequency applications for 5G networks.

Contribution

It introduces a novel layered composite Schottky diode with optimized dielectric properties and proposes nanostructuring techniques to achieve ultra-low dielectric constants for high-frequency use.

Findings

Optimized dielectric constant of 3.1 for BN/GaN composite.

Minimized dielectric constant of 1.5 for BN monolayer on aluminum.

Potential to push cut-off frequency to high-band 5G networks.

Abstract

The Schottky diode, BN/GaN layered composite contacting to bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences the optical properties of the layered composite. The relative dielectric constant of BN/GaN layered composite as a function of layer-to-layer separation is investigated where the optimized dielectric constant is 3.1. Furthermore, we design another Schottky diode via nanostructuring. Our first principle calculation suggests that the relative dielectric constant of boron nitride monolayer can be minimized to 1.5 only if it is deposited on aluminum monolayer. It is rare to find a semiconductor with the dielectric constant close to 1 which may push the cut-off frequency of Al/BN-based rectenna to the high-band 5G network.