Optically induced Kondo effect in semiconductor quantum wells
I. V. Iorsh, O. V. Kibis

TL;DR
This paper theoretically demonstrates that circularly polarized light can induce localized electron states in 2D semiconductor quantum wells, leading to a Kondo effect through antiferromagnetic interactions.
Contribution
It introduces a novel method to induce the Kondo effect optically in semiconductor quantum wells, expanding potential experimental and technological applications.
Findings
Circularly polarized irradiation creates localized electron states.
Induced states interact antiferromagnetically with conduction electrons.
Conditions for experimental observation are discussed.
Abstract
It is demonstrated theoretically that the circularly polarized irradiation of two-dimensional electron systems can induce the localized electron states which antiferromagnetically interact with conduction electrons, resulting in the Kondo effect. Conditions of experimental observation of the effect are discussed for semiconductor quantum wells.
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Taxonomy
TopicsAdvanced Materials Characterization Techniques
