Origin of Robust Rectification in Geometric Diodes

TL;DR

This paper reveals that geometric diodes achieve robust THz rectification through bias-induced barrier lowering, independent of fragile quantum effects, making them practical for real-world applications.

Contribution

It introduces a new physical understanding of geometric diode rectification based on barrier lowering, contrasting with previous quantum-based explanations.

Findings

Achieves rectification up to 1.1 THz

Demonstrates robustness in normal environments

Identifies key factors influencing diode performance

Abstract

Geometric diodes, which take advantage of geometric asymmetry to achieve current flow preference, are promising for THz current rectification. Previous studies relate geometric diodes' rectification to quantum coherent or ballistic transport, which is fragile and critical of the high-quality transport system. Here we propose a different physical picture and demonstrate a robust current rectification originating from the asymmetric bias induced barrier lowering, which generally applies to common semiconductors in normal environments. Key factors to the diode's performance are carefully analyzed, and an intrinsic rectification ability at up to 1.1 THz is demonstrated.