Semiconductors and Dirichlet-to-Neumann maps

TL;DR

This paper studies how to determine discontinuous doping profiles in semiconductors using voltage-current data, framing it as an inverse problem involving the Dirichlet-to-Neumann map with partial data.

Contribution

It introduces a novel approach to identify doping profiles in semiconductors through inverse boundary value problems related to the Dirichlet-to-Neumann map.

Findings

Successful formulation of the inverse problem for doping profile identification

Analysis of the Dirichlet-to-Neumann map with partial data

Potential methods for reconstructing doping profiles from boundary measurements

Abstract

We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the Dirichlet-to-Neumann (DN) map with partial data.