Quantifying epitaxial growth using a purely topographical signal

TL;DR

This paper introduces a Fourier-based topographical analysis method and a q-score metric to quantify epitaxial growth in thin films, overcoming limitations of traditional diffraction techniques.

Contribution

It presents a novel topographical signal-processing approach and a new quantitative metric for assessing epitaxial order in thin films.

Findings

Fourier method successfully extracts epitaxial information from topographical data.

The q-score quantifies the degree of epitaxial ordering.

Method enables more accurate and quantitative analysis of thin film growth.

Abstract

Thin films are ubiquitous, with uses ranging from optoelectronics to antibacterial coatings. Unfortunately, precisely quantifying how the choice of substrate influences epitaxial growth remains an unsolved problem. Here, a novel thin film of holmium oxide with record-high paramagnetic saturation was grown on a variety of substrates. Conventional attempts to extract epitaxial information to characterize the growth mechanism were ineffective, due to the unique size regime of the product. Instead, a signal-processing inspired Fourier method was used to elucidate information on epitaxial ordering from purely topographical data, avoiding the pitfalls of atomic-level diffraction. Further, we define and utilize an inner product-based metric termed a q-score that can quantify the relative degree of ordering of epitaxial crystallites. The q-score provides a direct measure of epitaxy, enabling more quantitative future studies of thin film growth.