Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy
Diego de Matteis, Marta De Luca, Elham M. T. Fadaly, Marcel A., Verheijen, Miquel Lopez-Suarez, Riccardo Rurali, Erik P.A.M. Bakkers and, Ilaria Zardo

TL;DR
This study uses Raman spectroscopy and first-principles calculations to investigate lattice vibrations and electronic resonances in hexagonal Ge and SixGe1-x nanowires, revealing their phononic properties and potential for optoelectronic applications.
Contribution
It provides detailed phonon frequency calibration, spatial dependence analysis, and electronic-phononic coupling insights in hexagonal SixGe1-x nanowires, advancing understanding of their lattice dynamics.
Findings
Frequency-composition calibration curves for phonon modes
Dependence of phononic modes on nanowire position
Resonant Raman reveals coupling between lattice vibrations and electronic transitions
Abstract
Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal phase GaAs-Ge and GaAs-SixGe1-x core-shell nanowires with x up to 0.59. By combining position-, polarization- and excitation wavelength-dependent u-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency-composition calibration curves for the phonon…
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