Finite transverse conductance in topological insulators under an applied in-plane magnetic field
Dhavala Suri, Abhiram Soori

TL;DR
This paper investigates the transverse conductance in topological insulators under an in-plane magnetic field, revealing how it depends on chemical potentials, magnetic field strength, and system width, with implications for understanding the planar Hall effect.
Contribution
It provides a scattering theory analysis of conductance in a normal metal-TI-normal metal hybrid, highlighting the dependence of transverse conductance on chemical potential differences, magnetic field, and system geometry, which is a novel approach.
Findings
Transverse conductance depends on the position between junctions and chemical potentials.
Conductance exhibits π- and 2π-periodicity depending on chemical potential equality.
Transverse conductance peaks at certain magnetic field strengths and oscillates with system width.
Abstract
Recently, in topological insulators (TIs) the phenomenon of planar Hall effect (PHE) wherein a current driven in presence an in-plane magnetic field generates a transverse voltage has been experimentally witnessed. There have been a couple of theoretical explanations of this phenomenon. We investigate this phenomenon based on scattering theory on a normal metal-TI-normal metal hybrid structure and calculate the conductances in longitudinal and transverse directions to the applied bias. The transverse conductance depends on the spatial location between the two NM-TI junctions where it is calculated. It is zero in the drain electrode when the chemical potentials of the top and the bottom TI surfaces ( and respectively) are equal. The longitudinal conductance is -periodic in -the angle between the bias direction and the direction of the in-plane magnetic field.…
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