One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor

TL;DR

This paper investigates edge contact fabrication to encapsulated MoS2 using sputtered MoRe superconductor, revealing challenges in contact transparency and supercurrent support at low temperatures, impacting future device development.

Contribution

It introduces a contact methodology with sputtered MoRe for encapsulated MoS2 and evaluates its effectiveness, highlighting limitations in contact transparency and supercurrent support.

Findings

Poor contact transparency observed.

Devices do not support measurable supercurrent at 3K.

Implications for future fabrication recipes.

Abstract

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes.