Metastable piezoelectric group IV monochalcogenide monolayers with a buckled honeycomb structure
Shiva P. Poudel, Salvador Barraza-Lopez

TL;DR
This study demonstrates that twelve group-IV monochalcogenide monolayers with a buckled honeycomb structure are metastable, exhibit out-of-plane piezoelectricity, and have potential for practical applications due to their long escape times and stable vibrational properties.
Contribution
We identify the metastability and out-of-plane piezoelectricity of twelve group-IV monochalcogenide monolayers using multiple independent methods.
Findings
Large energy barriers imply practical metastability.
No negative vibrational modes in phonon dispersion.
Out-of-plane piezoelectric response observed.
Abstract
Twelve two-dimensional group-IV monochalcogenide monolayers (SiS, SiSe, SiTe, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, and PbTe) with a buckled honeycomb atomistic structure--belonging to symmetry group P3m1--and an out-of-plane intrinsic electric polarization are shown to be metastable by three independendent methods. First, we uncover a coordination-preserving structural transformation from the low-buckled honeycomb structure onto the lower-energy Pnm2 (or Pmmn for PbS, PbSe, and PbTe) phase to estimate {\em energy barriers} that must be overcome during such structural transformation. Using the curvature of the local minima and as inputs to Kramers escape formula, large escape times are found, implying the structural metastability of the buckled honeycomb phase (nevertheless, and with the exception of PbS and PbSe, these phases display escape times ranging from 700…
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