Monolayer H-Si-P Semiconductors: Structural stability, electronic structure, optical properties, and Prospects for photocatalytic water splitting
X.Q.Shu, J. H. Lin, H. Zhang

TL;DR
This study predicts and analyzes hydrogenated silicon phosphide monolayers, revealing their stability, tunable electronic properties, and potential for solar energy conversion and photocatalytic water splitting based on first-principles calculations.
Contribution
It systematically investigates the structure and properties of H-Si-P monolayers, highlighting their stability, tunable bandgaps, and application prospects for photocatalysis and nanoelectronics.
Findings
H-Si-P monolayers are stable indirect bandgap semiconductors.
Their bandgaps can be effectively tuned by biaxial strain.
They exhibit excellent potential for solar energy conversion and water splitting.
Abstract
Group IV and V monolayers are the promising state-of-the-art 2D materials owing to their high carrier mobility, tunable bandgaps, and optical linear dichroism along with outstanding electronic and thermoelectric properties. Furthermore, recent studies reveal the stability of free-standing 2D monolayers by hydrogenation. Inspired by this, we systematically predict and investigate the structure and properties of various hydrogen saturated silicon phosphide (H-Si-P) monolayers, based on first-principles calculations. According to the results, H-Si-P monolayers belong to indirect bandgap semiconductors with a highly stable structure. Their bandgaps and band edge positions assessed using accurate hybrid functional are shown to be effectively adjusted by applying a biaxial strain. Furthermore, the absorption spectra of these monolayers, simulated in the context of time-dependent density…
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