Current-induced magnetization switching in a chemically disordered A1 CoPt single layer

TL;DR

This paper demonstrates current-induced magnetization switching in a chemically disordered A1 CoPt single layer with perpendicular magnetic anisotropy, highlighting a new approach to control magnetization without additional SOT materials.

Contribution

It introduces the first demonstration of SOT-induced switching in a single-layer CoPt film with composition gradient, eliminating the need for external SOT sources.

Findings

Achieved magnetization switching in a single-layer CoPt with perpendicular anisotropy.

Established that composition gradients break inversion symmetry and enable SOT.

Validated the efficiency of SOT in chemically disordered CoPt layers.

Abstract

We report the first demonstration of the current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained in a wide composition range of the A1 Co1-xPtx single layers, which allows to fabricate perpendicularly magnetized CoPt single layer with composition gradient to break the inversion symmetry of the structure. By fabricating the gradient CoPt single layer, we have evaluated the SOT efficiency and successfully realized the SOT-induced magnetization switching. Our study provides an approach to realize the current-induced magnetization in the ferromagnetic single layers without attaching SOT source materials.