Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

TL;DR

This study demonstrates a room temperature Mott metal-insulator transition in V2O3 thin films induced by strain-engineering, enabling control over electronic phases and properties not achievable in bulk materials.

Contribution

The paper introduces a method to induce and control a Mott transition at room temperature in V2O3 thin films through epitaxial strain, revealing new phase states and functionalities.

Findings

Achieved a colossal resistivity change (up to 100,000%) at room temperature.

Engineered strain stabilizes intermediate electronic and optical states.

Proposed a new phase diagram based on in-plane lattice constant tuning.

Abstract

Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or doping are varied giving rise to different structural, magnetic or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in thin film compounds so far. Here, via continuous lattice deformations induced by heteroepitaxy we demonstrate a room temperature Mott metal-insulator transition in 1.5% Cr-doped and pure V2O3 thin films. By means of a controlled epitaxial strain, not only the structure but also the intrinsic electronic and optical properties of the thin films are stabilized at different intermediate states between the metallic and insulating phases, inaccessible in bulk materials. This leads to films with unique features such as a colossal change in room temperature resistivity (DR/R up to 100,000 %) and a broad range of optical constant values, as consequence of a strain-modulated bandgap. We propose a new phase diagram for pure and Cr-doped V2O3 thin films with the engineered in-plane lattice constant as a tuneable parameter. Our results demonstrate that controlling phase transitions in correlated systems by epitaxial strain offers a radical new approach to create the next generation of Mott devices.