Tailoring the anomalous Hall effect of SrRuO$_3$ thin films by strain: a first principles study
Kartik Samanta, Marjana Le\v{z}ai\'c, Stefan Bl\"ugel, Yuriy, Mokrousov

TL;DR
This study uses first principles calculations to show how strain-induced structural distortions in SrRuO$_3$ thin films significantly influence their electronic structure and anomalous Hall effect, revealing tunable properties via substrate strain.
Contribution
It provides a detailed first-principles analysis of how substrate-induced strain alters the structure and anomalous Hall response of SrRuO$_3$ thin films, highlighting the role of oxygen octahedral distortions.
Findings
Strain changes the octahedral tilting angle in SrRuO$_3$ films.
The anomalous Hall conductivity switches sign with strain.
Strain-mediated effects align with experimental observations.
Abstract
Motivated by the recently observed unconventional Hall effect in ultra-thin films of ferromagnetic SrRuO (SRO) we investigate the effect of strain-induced oxygen octahedral distortion in the electronic structure and anomalous Hall response of the SRO ultra-thin films by virtue of density functional theory calculations. Our findings reveal that the ferromagnetic SRO films grown on SrTiO (in-plane strain of 0.47) have an orthorhombic (both tilting and rotation) distorted structure and with an increasing amount of substrate-induced compressive strain the octahedral tilting angle is found to be suppressed gradually, with SRO films grown on NdGaO (in-plane strain of 1.7) stabilized in the tetragonal distorted structure (with zero tilting). Our Berry curvature calculations predict a positive value of the anomalous Hall conductivity of 76\,S/cm at 1.7…
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