Transfer of Large-Scale Two-Dimensional Semiconductors: Challenges and Developments
Adam. J. Watson, Wenbo Lu, Marcos H. D. Guimar\~aes, Meike St\"ohr

TL;DR
This paper reviews the challenges and recent developments in transferring large-scale 2D semiconductors, especially TMDs, highlighting techniques, issues, and quality improvement strategies crucial for device applications.
Contribution
It provides a systematic comparison of transfer methods for CVD-grown 2D semiconductors and discusses solutions to common transfer-related problems.
Findings
Comparison of transfer techniques and their drawbacks
Identification of issues like bubbles, residues, wrinkles
Strategies for improving film quality and device performance
Abstract
Two-dimensional (2D) materials offer opportunities to explore both fundamental science and applications in the limit of atomic thickness. Beyond the prototypical case of graphene, other 2D materials have recently come to the fore. Of particular technological interest are 2D semiconductors, of which the family of materials known as the group-VI transition metal dichalcogenides (TMDs) has attracted much attention. The presence of a bandgap allows for the fabrication of high on-off ratio transistors and optoelectronic devices, as well as valley/spin polarized transport. The technique of chemical vapour deposition (CVD) has produced high-quality and contiguous wafer-scale 2D films, however, they often need to be transferred to arbitrary substrates for further investigation. In this Review, the various transfer techniques developed for transferring 2D films will be outlined and compared,…
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