Pressure-Induced Insulator-Metal Transition in Silicon Telluride from First-Principles Calculations
Romakanta Bhattarai, Xiao Shen

TL;DR
This study uses first-principles calculations to identify two metallic phases of silicon telluride under pressure, explaining the insulator-metal transition observed experimentally and analyzing structural, electronic, and vibrational properties.
Contribution
The paper proposes and characterizes two new metallic phases of Si2Te3 using first-principles methods, providing insight into the pressure-induced phase transition.
Findings
M1 and M2 phases are energetically favorable under high pressure.
Pressure induces an insulator-metal transition with bandgap changes.
Raman spectra shifts confirm phase transition at high pressure.
Abstract
Silicon telluride (Si2Te3) is a two-dimensional semiconductor with unique structural properties due to the size contrast between Si and Te atoms. A recent experiment shows that the material turns metallic under hydrostatic pressure, while the lattice structure of the metallic phase remains to be identified. In this paper, we propose two metallic phases, M1 and M2, of Si2Te3 using the evolution algorithm and first-principles density functional theory (DFT) calculations. Unlike the presence of Si-Si dimers in the semiconducting (SC) phase, both M1 and M2 phases have individual Si atoms, which play important roles in the metallicity. Analysis of structural properties, electronic properties, dynamical as well as thermal stability is performed. The energies of these new structures are compared with the SC phase under the subsequent hydrostatic pressure up to 12 GPa. The results show that M1…
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Taxonomy
TopicsSemiconductor materials and interfaces · 2D Materials and Applications · Chalcogenide Semiconductor Thin Films
