Revisiting step instabilities on crystal surfaces. Part II: General theory
L. Guin, M. E. Jabbour, L. Shaabani-Ardali, N. Triantafyllidis

TL;DR
This paper develops a comprehensive stability analysis of crystal surface steps without relying on the quasistatic approximation, revealing a new dynamics effect that influences step stability and offers alternative explanations for experimental observations.
Contribution
It introduces a general stability framework accounting for convective and transient effects, challenging the classical quasistatic approximation in crystal surface growth analysis.
Findings
Identification of the 'dynamics effect' influencing step stability.
Validation that the dynamics effect remains significant in slow growth regimes.
Alternative explanation for step bunching phenomena on Si(111) and GaAs(001).
Abstract
The quasistatic approximation is a useful but questionable simplification for analyzing step instabilities during the growth/evaporation of vicinal surfaces. Using this approximation, we characterized in Part I of this work the effect on stability of different mechanisms and their interplay: elastic step-step interactions, the Schwoebel barrier, and the chemical coupling of the diffusion fields on adjacent terraces. In this second part, we present a stability analysis of the general problem without recourse to the quasistatic approximation. This analysis reveals the existence of a supplementary mechanism, which we label the "dynamics effect" as it follows from accounting for all the convective and transient terms in the governing equations. This effect can be stabilizing or destabilizing depending on the ratio of step attachment/detachment kinetics to terrace diffusion kinetics.…
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