Revisiting step instabilities on crystal surfaces. Part I: The quasistatic approximation
L. Guin, M. E. Jabbour, N. Triantafyllidis

TL;DR
This paper analyzes the combined effects of various mechanisms on step bunching instability during crystal surface growth using a quasistatic approximation, providing a unified analytical framework.
Contribution
It introduces a unified analytical treatment of multiple mechanisms influencing step bunching, highlighting their combined effects within the quasistatic approximation.
Findings
Ehrlich-Schwoebel effect, elastic interactions, and chemical effects combine quasi-additively.
Step permeability modifies the relative influence of other mechanisms.
Quasistatic approximation simplifies the analysis but may overlook dynamic effects.
Abstract
Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a phenomenon termed step bunching, which corresponds to an instability of the equal-spacing step propagation. Over the last fifty years, various mechanisms have been proposed to explain step bunching, the most prominent of which are the inverse Ehrlich-Schwoebel effect (i.e., the asymmetry which favors the attachment of adatoms from the upper terrace), elastically mediated interactions between steps (in heteroepitaxy), step permeability (in electromigration-controlled growth), and the chemical effect (which couples the diffusion fields on all terraces). Beyond the discussion of the influence of each of these mechanisms taken independently on the propensity to…
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