Kondo-assisted switching between three conduction states in capacitively coupled quantum dots

TL;DR

This paper proposes a nanoscale double quantum dot device that leverages Kondo effects to enable highly sensitive switching among three distinct conduction states, controlled via gate voltage.

Contribution

It introduces a novel quantum dot device design that exploits Kondo physics for multi-state switching at low temperatures.

Findings

Identification of a narrow Kondo regime enabling state switching

Prediction of three distinct conduction states: insulating, normal, and resonant

High sensitivity of switching characteristics due to Kondo effects

Abstract

We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined states : insulating, normal conduction and resonant conduction.