Quantum Adiabatic Doping for Atomic Fermi-Hubbard Quantum Simulations

TL;DR

This paper explores quantum adiabatic doping in ultracold atom systems to simulate the Fermi-Hubbard model, demonstrating improved efficiency in hole-doped regimes and addressing localization challenges through numerical simulations.

Contribution

It introduces a systematic study of quantum adiabatic doping across various fillings, revealing conditions that optimize ground state preparation in doped Fermi-Hubbard models.

Findings

Localization slows down adiabatic doping at commensurate fillings.

Hole doping reduces localization effects, improving adiabatic efficiency.

Interactions destabilize localization, enhancing doping performance.

Abstract

There have been considerable research efforts devoted to quantum simulations of Fermi-Hubbard model with ultracold atoms loaded in optical lattices. In such experiments, the antiferromagnetically ordered quantum state has been achieved at half filling in recent years. The atomic lattice away from half filling is expected to host d-wave superconductivity, but its low temperature phases have not been reached. In a recent work, we proposed an approach of incommensurate quantum adiabatic doping, using quantum adiabatic evolution of an incommensurate lattice for preparation of the highly correlated many-body ground state of the doped Fermi-Hubbard model starting from a unit-filling band insulator. Its feasibility has been demonstrated with numerical simulations of the adiabatic preparation for certain incommensurate particle-doping fractions, where the major problem to circumvent is the atomic localization in the incommensurate lattice. Here we carry out a systematic study of the quantum adiabatic doping for a wide range of doping fractions from particle-doping to hole-doping, including both commensurate and incommensurate cases. We find that there is still a localization-like slowing-down problem at commensurate fillings, and that it becomes less harmful in the hole-doped regime. With interactions, the adiabatic preparation is found to be more efficient for that interaction effect destabilizes localization. For both free and interacting cases, we find the adiabatic doping has better performance in the hole-doped regime than the particle-doped regime. We also study adiabatic doping starting from the half-filling Mott insulator, which is found to be more efficient for certain filling fractions.