Intrinsic Spin Hall Conductivity Platform in Triply Degenerate Semimetal

TL;DR

This paper proposes a new platform for intrinsic spin Hall conductivity in triply degenerate semimetals, specifically in metallic TaN, which exhibits a wide energy range and high spin Hall angle, promising stable spin current generation.

Contribution

It introduces a novel SHC platform in metallic triply degenerate semimetals using a four-band k·p model and confirms its realization in TaN through ab initio calculations.

Findings

SHC platform exists between specific states in triply degenerate semimetals.

TaN exhibits a nearly ideal SHC platform with a width of 0.56 eV.

TaN's spin Hall angle reaches -0.62, surpassing many previous materials.

Abstract

It is generally believed that conductivity platform can only exist in insulator with topological nontrivial bulk occupied states. Such rule exhibits in two dimensional quantum (anomalous) Hall effect, quantum spin Hall effect, and three dimensional topological insulator. In this letter, we propose a spin Hall conductivity (SHC) platform in a kind of three dimensional metallic materials with triply degenerate points around the Fermi level. With the help of a four bands \textbf{k}${\cdot}$\textbf{p} model, we prove that SHC platform can form between $|\frac{3}{2},\pm\frac{3}{2}\rangle$ and $|\frac{1}{2},\pm\frac{1}{2}\rangle$ states of metallic system. Our further ab initio calculations predict that a nearly ideal SHC platform exhibits in an experimentally synthesized TaN. The width of the SHC platform reaches up to 0.56 eV, hoping to work under high temperature. The electrical conductivity tensor of TaN indicates that its spin Hall angle reaches -0.62, which is larger than many previous reported materials and make it an excellent candidate for producing stable spin current.