Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review
Muhammad Nadeem, Alex R. Hamilton, Michael S. Fuhrer, Xiaolin Wang

TL;DR
This review discusses theoretical models and mechanisms for realizing the quantum anomalous Hall effect in magnetic topological insulators and spin-gapless semiconductors, emphasizing topological phase transitions driven by ferromagnetic exchange and spin-orbit coupling.
Contribution
It provides a comprehensive overview of three fundamental models for quantum anomalous Hall effect in various two-dimensional Dirac materials, highlighting symmetry constraints and phase transitions.
Findings
Models demonstrate how magnetic doping induces quantum anomalous Hall states.
Ferromagnetic exchange interaction drives topological phase transitions.
Symmetry considerations constrain the nature of mass terms in these models.
Abstract
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: (i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)2Te3 thin films, (ii) four band tight-binding model for graphene with magnetic adatoms, and (iii) two (three) band spinfull tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is…
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