Fermi Level Modulation of Boron Nitride Nanosheets by Vacancy Driven Compressive Strain
Tanmay Mahanta, Tanuja Mohanty

TL;DR
This study investigates how vacancy-induced compressive strain from Au irradiation modulates the work function of boron nitride nanosheets, combining experimental characterization and simulations to reveal strain effects on electronic properties.
Contribution
It demonstrates that vacancy-driven compressive strain from Au irradiation effectively modulates the work function of BNNS, providing insights into strain-induced electronic property tuning.
Findings
Work function decreases with increased Au ion dose.
Compressive strain confirmed by XRD peak shifts.
Vacancy-induced strain correlates with work function modulation.
Abstract
The compressive strain induced work function modulation in boron nitride nanosheets (BNNS) has been studied. The compressive strain arose due to the irradiation of 30 keV Au beam on thin films of BNNS. Before irradiation BNNS was characterized by Raman spectroscopy, UV-Vis spectroscopy, where using Tauc plot the bandgap of chemically synthesized BNNS from commercial hBN powder has been calculated as well as the layer numbers on thin films also quantified using an empirical relation exploiting the full width at half maxima (FWHM) of Raman peak of BNNS. The Scanning Electron Microscopy (SEM) images were also taken where layer like structure in pristine BNNS sample is visible and irradiation-induced changes in terms of irregular dots on BNNS samples is witnessed. The X-Ray Diffraction (XRD) was used to characterize the BNNS samples where peak corresponding to (002) plane is depicted as…
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