Topological effects of phonons in GaN and AlxGa1-xN: A potential perspective for tuning phonon transport

TL;DR

This paper investigates the topological properties of phonons in GaN, AlN, and AlGaN, revealing the presence of Weyl phonon states in Al-containing nitrides which could enhance thermal management in electronics.

Contribution

It provides the first topological phonon analysis of GaN, AlN, and AlGaN, identifying Weyl phonon states in AlGaN that could be used to control phonon transport.

Findings

No nontrivial topological phonon states in GaN.

Weyl phonon points found in AlN and AlGaN.

Potential for one-way phonon transport in AlGaN-based devices.

Abstract

Tuning thermal transport in semiconductor nanostructures is of great significance for thermal management in information and power electronics. With excellent transport properties, such as ballistic transport, immunity to point defects and disorders, and forbidden backscattering, topological phonon surface states show remarkable potential in addressing this issue. Herein, topological phonon analyses are performed on hexagonal wurtzite GaN to check the topological characteristics of phonons. And other nitrides of the same family, i.e., AlN and AlGaN alloy, are also calculated from a topological phonon phase transition perspective. With the aid of first-principle calculations and topological phonon theory, Weyl phonon states, which host surfaces states without backscattering, are investigated for all these materials. The results show that there is no nontrivial topological phonon state in GaN. However, by introducing Al atoms, i.e., in wurtzite type AlN and AlGaN, more than one Weyl phonon point is found, confirmed by obvious topological characteristics, including non-zero integer topological charges, source/sink in Berry curvature distributions, surface local density of states and surface arcs. As AlN and AlGaN are typical materials in AlGaN/GaN heterostructure based electronics, the existence of topological phonon states in them will benefit thermal management by facilitating the design of one-way interfacial phonon transport without backscattering.