Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

TL;DR

This paper presents a hybrid III-V diamond photonic platform that enables efficient integration of silicon vacancy centers in diamond for quantum communication, avoiding substrate etching and facilitating scalable fabrication.

Contribution

It introduces a heterogeneously integrated on-chip platform for SiV0 centers that enhances emission and enables telecom wavelength conversion without damaging the diamond substrate.

Findings

Design of a heterogenous III-V diamond platform for SiV0 centers

Potential for Purcell enhancement of SiV0 emission

Facilitates efficient frequency conversion to telecom band

Abstract

Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques.