Virtual IED sensor for df rf CCP discharges
M. Bogdanova, D. Lopaev, T. Rakhimova, D. Voloshin, A. Zotovich, S., Zyryanov

TL;DR
This paper presents a virtual IED sensor for real-time plasma process control in rf CCP discharges, using a fast calculation method validated across different gases, enabling accurate IED estimation without direct measurement.
Contribution
It introduces a novel virtual IED sensor based on a fast calculation method incorporating sheath waveform data and Monte Carlo simulations, suitable for real-time plasma processing.
Findings
Adequate IED estimation achieved across various gases.
Estimation time is approximately tens of seconds on modern PCs.
Validation confirms the sensor's effectiveness in real plasma conditions.
Abstract
Ion-assisted surface processes are the basis of modern plasma processing. Ion energy distribution (IED) control is critical for precise material modification, especially in atomic-level technologies such as atomic layer etching. Since this control should be done in real time, it requires real-time feedback using fast process sensors. In the general case of an industrial plasma reactor, when direct IED measurement is not possible, the IED can be estimated using the concept of a virtual IED sensor. In this paper, a similar virtual IED sensor is considered using an asymmetric dual-frequency (df) rf CCP discharge as an example. It is based on a fast calculation method of the IED at an rf-biased electrode. This approach uses the experimentally measured sheath voltage waveform and plasma density (or ion flux) as input data, and also includes Monte-Carlo simulation of ion motion in the sheath…
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