Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4

TL;DR

This paper demonstrates room-temperature nonlinear Hall effect in Weyl semimetal TaIrTe4 and utilizes it for wireless RF rectification, highlighting potential for practical electronic applications.

Contribution

It reports the first observation of room-temperature NLHE in TaIrTe4 and links it to electronic structure changes, enabling wireless RF rectification without external bias.

Findings

Room-temperature NLHE observed in TaIrTe4

Sign inversion of NLHE with temperature explained by electronic structure shifts

Wireless RF rectification achieved using NLHE at room temperature

Abstract

The nonlinear Hall effect (NLHE), which can produce a transverse voltage without any magnetic field, is a potential alternative for rectification or frequency doubling. However, the low temperature detection of NLHE limits its applications. Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe4, which hosts a robust NLHE due to substantial broken inversion symmetry and large band overlapping at the Fermi level. We also observe a temperature-induced sign inversion of NLHE in TaIrTe4. Our theoretical calculations suggest that the observed sign inversion is a result of temperature-induced shift in the chemical potential indicating a direct correlation of NLHE with the electronic structure at the Fermi surface. Finally, the room-temperature NLHE in TaIrTe4 is exploited to demonstrate the wireless RF rectification with zero external bias and magnetic field. This work opens a door to realizing room temperature applications based on the NLHE in Weyl semimetals.