Quantum-enhanced photocell based on GaN quantum dots

TL;DR

This paper introduces a quantum-enhanced GaN quantum dot photocell that leverages excitonic dipole interactions and built-in electric fields to surpass classical efficiency limits in energy harvesting devices.

Contribution

It proposes a novel quantum photocell design based on GaN quantum dots exploiting dipole coupling and electric fields to improve performance over classical devices.

Findings

Increased photovoltage and photocurrent compared to classical photocells.

Efficiency remains positive and saturates at a finite value in multi-dot systems.

Quantum effects significantly enhance device performance.

Abstract

In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed balance, leading to enhanced device performance. This mechanism is significantly stronger than Fano interference, and our results demonstrate that such a photocell exhibits increased photovoltage and photocurrent compared to its classical counterparts. Numerical simulations further show that the efficiency remains positive and saturates at a finite value for multi-quantum dot systems. The proposed quantum photocell represents a promising step towards harnessing quantum effects in practical energy-harvesting devices.