Reducing Solid-State Drive Read Latency by Optimizing Read-Retry (Extended Abstract)
Jisung Park, Myungsuk Kim, Myoungjun Chun, Lois Orosa, Jihong Kim, and, Onur Mutlu

TL;DR
This paper proposes novel techniques to significantly reduce SSD read latency caused by read-retry operations in 3D NAND flash memory by exploiting advanced features like pipelined reads and ECC margin.
Contribution
It introduces Pipelined Read-Retry (PR²) and Adaptive Read-Retry (AR²), new methods that leverage existing NAND features to cut down read-retry latency.
Findings
Up to 31.5% SSD response time improvement
Average 17% latency reduction across workloads
Effective use of CACHE READ and ECC margin
Abstract
3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is essential to ensuring the reliability of modern NAND flash memory, it can significantly increase the read latency of an SSD by introducing multiple retry steps that read the target page again with adjusted read-reference voltage values. Through a detailed analysis of the read mechanism and rigorous characterization of 160 real 3D NAND flash memory chips, we find new opportunities to reduce the read-retry latency by exploiting two advanced features widely adopted in modern NAND flash-based SSDs: 1) the CACHE READ command and 2) strong ECC engine. First, we can reduce the read-retry latency using the advanced CACHE READ command that allows a NAND flash chip to…
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Taxonomy
TopicsAdvanced Data Storage Technologies · Semiconductor materials and devices · Parallel Computing and Optimization Techniques
