Fast response photogating in monolayer MoS2 phototransistors

TL;DR

This paper reveals a fast photogating mechanism in monolayer MoS2 phototransistors that dominates high-frequency response, challenging previous beliefs that slow charge trapping limited the response speed.

Contribution

It demonstrates a rapid photogating effect in encapsulated monolayer MoS2, identifying shallow sulfur vacancy traps as key to fast photoresponse at high frequencies.

Findings

Fast photogating effect dominates high-frequency response.

Shallow sulfur vacancy traps are responsible for rapid photoresponse.

Encapsulation enhances the understanding of trap dynamics.

Abstract

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS2 phototransistors PGE is generally attributed to charge trapping by polar molecules adsorbed to the semiconductor channel, giving rise to a very slow photoresponse. Thus, the photoresponse of 1L-MoS2 phototransistors at high-frequency light modulation is assigned to PCE alone. Here we investigate the photoresponse of a fully h-BN encapsulated monolayer (1L) MoS2 phototransistor. In contrast with previous understanding, we identify a rapidly responding PGE mechanism that becomes the dominant contribution to photoresponse under high-frequency light modulation. Using a Hornbeck-Haynes model for the photocarrier dynamics, we fit the illumination power dependence of this PGE and estimate the energy level of the involved traps. The resulting energies are compatible with shallow traps in MoS2 caused by the presence of sulfur vacancies.